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| savantic semiconductor product specification silicon npn power transistors 2N5671 2n5672 description with to-3 package high current ,high speed applications intended for high current and fast switching industrial applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2N5671 120 v cbo collector-base voltage 2n5672 open emitter 150 v 2N5671 90 v ceo collector-emitter voltage 2n5672 open base 120 v v ebo emitter-base voltage open collector 7 v i c collector current 30 a i b base current 10 a p d total power dissipation t c =25 140 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.25 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N5671 2n5672 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N5671 90 v ceo(sus) collector-emitter sustaining voltage 2n5672 i c =0.2a ;i b =0 120 v v cesat collector-emitter saturation voltage i c =15a; i b =1.2a 0.75 v v besat base-emitter saturation voltage i c =15a ;i b =1.2a 1.5 v v be base-emitter on voltage i c =15a ; v ce =5v 1.6 v i ceo collector cut-off current v ce =80v; i b =0 10 ma 2N5671 v ce =110v; v be(off) =1.5v 12 2n5672 v ce =135v; v be(off) =1.5v 10 2N5671 15 i cev collector cut-off current 2n5672 v ce =100v;v be(off) =1.5v; t c =150 10 ma i ebo emitter cut-off current v eb =7v; i c =0 10 ma h fe-1 dc current gain i c =15a ; v ce =2v 20 100 h fe-2 dc current gain i c =20a ; v ce =5v 20 f t trainsistion frequency i c =2a ; v ce =10v;f=1mhz 40 mhz switching times t on turn-on time 0.5 s t s storage time 1.5 s t f fall time i c =15a ;i b1 =- i b2 =1.2a v cc =30v;t p =0.1ms 0.5 s savantic semiconductor product specification 3 silicon npn power transistors 2N5671 2n5672 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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